Fujifilm’s deep knowledge of piezoelectric materials and deposition technologies, as well as its rapid device prototyping line, enable us to quickly design, build, and test MEMS devices that meet your needs
- Good displacement response linearity
- No poling process required
Finished device can be immediately operated. Even heated above Curie temperature, the device response is unaltered. - Highly uniform across a wafer and wafer-to-wafer
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Piezoelectric film on 8-inch wafer



High resolution, compact print heads with high-density 2-D arrayed nozzles actuated by FUJIFILM’s Nb-PZT film
Achieving device performance that is not reachable with conventional piezoelectric films